2N5639_D26Z

2N5639, 2N5639_D26Z, 2N5639_D75Z, 2N5639G, 2N5639RLRAG

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter2N5639_D26Z2N5639_D75Z2N5639G2N5639RLRAG
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Fairchild SemiconductorFairchild SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<350 mW<350 mW<310 mW<310 mW
Input capacitance of field effect transistor
Ciss
<10 pFVds = 12V (VGS)
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
>25 mAmin.: Vgs=0; Vds=20V
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<60 Ω
Gate-source breakdown voltage
VBRGSS
>30 V>30 V>35 V>35 V