2N5639

2N5639, 2N5639_D26Z, 2N5639_D75Z, 2N5639G, 2N5639RLRAG

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Description

Parameters

Parameter2N5639_D26Z2N5639_D75Z2N5639G2N5639RLRAG
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Fairchild SemiconductorFairchild SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<350 mW<350 mW<310 mW<310 mW
Input capacitance of field effect transistor
Ciss
<10 pFVds = 12V (VGS)
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
>25 mAmin.: Vgs=0; Vds=20V
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<60 Ω
Gate-source breakdown voltage
VBRGSS
>30 V>30 V>35 V>35 V