BZB784-C11,115

BZB784-C11, BZB784-C11,115

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Description

Parameters

ParameterBZB784-C11,115
IC package
Package
SC-70-3, SOT-323-3
Manufacturer
Manufacturer
NXP Semiconductors
Forvard voltage
UF
900 mVI = 10mA
Power dissipation
P
<180 mW
Stavilization voltage
Ust
11 V
Differential resistance
Rst
10 Ω
Leakage current
Ileak
100 nAU = 8V
Diodes connection type in assembly
Connection
2 (Common Anode)