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| Parameter | 1SV251-TB-E | |
|---|---|---|
Manufacturer | Manufacturer | SANYO Semiconductor (U.S.A) Co |
Reverse voltage | UR | <50 V |
Forvard current | IF | <50 mA |
Reversed pulse voltage | UR-i | |
Diode capacitance | CD | 0.23 pF |
Power dissipation | P | <150 mW |
Resistance | R | 4.5 ΩIf, F = 10mA, 100MHz |