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| Parameter | SIDC24D30SIC3 | |
|---|---|---|
IC package | Package | Wafer |
Manufacturer | Manufacturer | Infineon Technologies |
Forvard voltage | UF | 1.7 VI = 10A |
Reverse voltage | UR | <300 V |
Forvard current | IF | <10 A |
Reverse current | IR | 200 µAU = 300V |
Frequency | f | |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Diode capacitance | CD | 600 pF |
Recovery time | tREC | |
Diode technology | Technology | Silicon Carbide |
Diode speed class | Speed | No Recovery Time > 500mA (Io) |