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| Parameter | SIDC09D60E6 | SIDC09D60E6 UNSAWN | SIDC09D60E6Y | SIDC09D60F6 | |
|---|---|---|---|---|---|
IC package | Package | Wafer | |||
Manufacturer | Manufacturer | Infineon Technologies | |||
Forvard voltage | UF | 1.7 VI = 20A | 1.7 VI = 20A | 1.7 VI = 20A | 1.45 VI = 30A |
Reverse voltage | UR | <600 V | |||
Forvard current | IF | <20 A | <20 A | <20 A | <30 A |
Reverse current | IR | 27 µAU = 600V | |||
Frequency | f | ||||
Type of mounting a component on a board/circuit | Mount | Surface mount | |||
Recovery time | tREC | 150 ns | 150 ns | 150 ns | 126 ns |
Diode technology | Technology | Sdandard | |||
Diode speed class | Speed | Fast Recovery | |||