IDT10S60C

IDT10, IDT10S60C

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Description

Parameters

ParameterIDT10S60C
IC package
Package
TO-220-2
Manufacturer
Manufacturer
Infineon Technologies
Forvard voltage
UF
1.7 VI = 10A
Reverse voltage
UR
<600 V
Forvard current
IF
<10 A
Reverse current
IR
140 µAU = 600V
Frequency
f
Type of mounting a component on a board/circuit
Mount
Through-hole
Diode capacitance
CD
480 pF
Recovery time
tREC
Diode technology
Technology
Silicon Carbide
Diode speed class
Speed
No Recovery Time > 500mA (Io)
Diode series
Series
thinQ!™