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| Parameter | ESH3B-E3/57T | ESH3B-E3/9AT | ESH3BHE3/57T | ESH3BHE3/9AT | ESH3C-E3/57T | ESH3C-E3/9AT | ESH3CHE3/57T | ESH3CHE3/9AT | ESH3D-E3/57T | ESH3D-E3/9AT | ESH3DHE3/57T | ESH3DHE3/9AT | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | DO-214AB, SMC | |||||||||||
Manufacturer | Manufacturer | Vishay/General Semiconductor | |||||||||||
Forvard voltage | UF | 900 mVI = 3A | |||||||||||
Reverse voltage | UR | <100 V | <100 V | <100 V | <100 V | <150 V | <150 V | <150 V | <150 V | <200 V | <200 V | <200 V | <200 V |
Forvard current | IF | <3 A | |||||||||||
Reverse current | IR | 5 µAU = 100V | 5 µAU = 100V | 5 µAU = 100V | 5 µAU = 100V | 5 µAU = 150V | 5 µAU = 150V | 5 µAU = 150V | 5 µAU = 150V | 5 µAU = 200V | 5 µAU = 200V | 5 µAU = 200V | 5 µAU = 200V |
Frequency | f | ||||||||||||
Type of mounting a component on a board/circuit | Mount | Surface mount | |||||||||||
Recovery time | tREC | 40 ns | |||||||||||
Diode technology | Technology | Sdandard | |||||||||||
Diode speed class | Speed | Fast Recovery | |||||||||||