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| Parameter | П607А | |
|---|---|---|
Continuous collector current | IC | <300 mA |
Collector surge current | IC-i | <600 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <25 V |
Constant power dissipated on the transistor collector | PC | <1.5 W |
Static current transfer coefficient of bipolar transistor | hFE | 60 ~ 200 |
Saturation voltage between collector and emitter of transistor | UCE-sat | 2 V |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | 300 µA |
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit | ICE-rR | 500 µA |
Case temperature | tC | -60 ~ 70 |
Bipolar transistor structure | Structure | PNP |
Saturation voltage between base and emitter of transistor | UBE-sat | 600 mV |
Collector capacitance | CC | 50 pF |
Emitter capacitance | CE | 500 pF |