П602

П602, П602И, П602АИ

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Description

Parameters

ParameterП602ИП602АИ
Collector surge current
IC-i
<1.5 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<30 V<25 V
Constant power dissipated on the transistor collector
PC
<3 W
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 10080 ~ 200
Saturation voltage between collector and emitter of transistor
UCE-sat
2 V
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
100 µA130 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
1 mA
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP
Saturation voltage between base and emitter of transistor
UBE-sat
1.5 V
Collector capacitance
CC
170 pF
Emitter capacitance
CE
2.5 nF