П702

П702, П702А

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Description

Parameters

ParameterП702А
Continuous collector current
IC
<2 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<40 W
Static current transfer coefficient of bipolar transistor
hFE
10
Saturation voltage between collector and emitter of transistor
UCE-sat
4 V
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
2.5 mA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
5 mA
Case temperature
tC
-60 ~ 120
Bipolar transistor structure
Structure
NPN