П701

П701, П701А, П701Б

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Description

Parameters

ParameterП701АП701Б
Continuous collector current
IC
<500 mA
Collector surge current
IC-i
<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V<40 V
Constant power dissipated on the transistor collector
PC
<10 W
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 6030 ~ 100
Saturation voltage between collector and emitter of transistor
UCE-sat
7 V
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
100 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
3 mA
Case temperature
tC
-60 ~ 125
Bipolar transistor structure
Structure
NPN