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| Parameter | П216А | П216Б | П216В | П216Г | П216Д | |
|---|---|---|---|---|---|---|
Continuous collector current | IC | <7.5 A | ||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <40 V | <30 V | <30 V | <50 V | <50 V |
Constant power dissipated on the transistor collector | PC | <30 W | <24 W | <24 W | <24 W | <24 W |
Static current transfer coefficient of bipolar transistor | hFE | 18 | ||||
Saturation voltage between collector and emitter of transistor | UCE-sat | 750 mV | 500 mV | 500 mV | 500 mV | 500 mV |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | 500 µA | 1.5 mA | 2 mA | 2.5 mA | 2 mA |
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit | ICE-rR | 400 µA | 750 µA | 750 µA | 750 µA | 750 µA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 100 kHz | ||||
Case temperature | tC | -60 ~ 70 | ||||
Bipolar transistor structure | Structure | PNP | ||||
Saturation voltage between base and emitter of transistor | UBE-sat | 1.5 V | ||||