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| Parameter | П215 | |
|---|---|---|
Continuous collector current | IC | <5 A |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <80 V |
Constant power dissipated on the transistor collector | PC | <10 W |
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 150 |
Saturation voltage between collector and emitter of transistor | UCE-sat | 900 mV |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | 300 µA |
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit | ICE-rR | 300 µA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 150 kHz |
Case temperature | tC | -60 ~ 70 |
Bipolar transistor structure | Structure | PNP |
Saturation voltage between base and emitter of transistor | UBE-sat | 1.2 V |