П215

П215

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Description

Parameters

ParameterП215
Continuous collector current
IC
<5 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V
Constant power dissipated on the transistor collector
PC
<10 W
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 150
Saturation voltage between collector and emitter of transistor
UCE-sat
900 mV
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
300 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
300 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
150 kHz
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP
Saturation voltage between base and emitter of transistor
UBE-sat
1.2 V