П4БЭ

П4, П4АЭ, П4БЭ, П4ВЭ, П4ГЭ, П4ДЭ

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Description

Parameters

ParameterП4АЭП4БЭП4ВЭП4ГЭП4ДЭ
Continuous collector current
IC
<5 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V<60 V<35 V<50 V<50 V
Constant power dissipated on the transistor collector
PC
<20 W<25 W<25 W<25 W<25 W
Static current transfer coefficient of bipolar transistor
hFE
515 ~ 401015 ~ 3030
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
500 µA400 µA400 µA400 µA400 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
150 kHz
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP