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| Parameter | П416А | П416Б | |
|---|---|---|---|
Continuous collector current | IC | <25 mA | |
Collector surge current | IC-i | <120 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | |
Constant power dissipated on the transistor collector | PC | <100 mW | |
Pulsed power dissipated on the transistor collector | PC-i | <360 mW | |
Static current transfer coefficient of bipolar transistor | hFE | 60 ~ 125 | 90 ~ 200 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | 5 µA | |
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit | ICE-rR | 100 µA | |
Case temperature | tC | -60 ~ 70 | |
Bipolar transistor structure | Structure | PNP | |