П414Б

П414, П414А, П414Б

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Description

Parameters

ParameterП414АП414Б
Continuous collector current
IC
<10 mA
Collector surge current
IC-i
<30 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<10 V
Constant power dissipated on the transistor collector
PC
<100 mW
Static current transfer coefficient of bipolar transistor
hFE
60 ~ 120100 ~ 200
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
5 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
60 MHz
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP