МП26

МП26, МП26А, МП26Б

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Description

Parameters

ParameterМП26АМП26Б
Collector surge current
IC-i
<400 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<70 V
Constant power dissipated on the transistor collector
PC
<200 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 5030 ~ 80
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
75 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
75 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
250 kHz500 kHz
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP