МП14А

МП14, МП14А, МП14Б, МП14И

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Description

Parameters

ParameterМП14АМП14БМП14И
Continuous collector current
IC
<20 mA
Collector surge current
IC-i
<150 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<30 V
Constant power dissipated on the transistor collector
PC
<150 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 4030 ~ 6020 ~ 80
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
200 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
30 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
1 MHz
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP