ТМ11

ТМ11, ТМ11А, ТМ11Б

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Description

Parameters

ParameterТМ11АТМ11Б
Continuous collector current
IC
<50 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V
Constant power dissipated on the transistor collector
PC
<150 mW
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 6030 ~ 160
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
20 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
150 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
500 kHz
Case temperature
tC
-60 ~ 120
Bipolar transistor structure
Structure
PNP