ТМ10Б

ТМ10, ТМ10А, ТМ10Б, ТМ10В, ТМ10Ж

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Description

Parameters

ParameterТМ10АТМ10БТМ10ВТМ10Ж
Continuous collector current
IC
<10 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<20 V<30 V<30 V<20 V
Constant power dissipated on the transistor collector
PC
<150 mW
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 12010 ~ 3220 ~ 6080
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
5 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
50 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
30 MHz
Case temperature
tC
-60 ~ 120