ТМ5

ТМ5, ТМ5А, ТМ5Б, ТМ5В, ТМ5Г, ТМ5Д

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Description

Parameters

ParameterТМ5АТМ5БТМ5ВТМ5ГТМ5Д
Continuous collector current
IC
<70 mA
Collector surge current
IC-i
<150 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V
Constant power dissipated on the transistor collector
PC
<75 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 5035 ~ 8060 ~ 130110 ~ 25020 ~ 60
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
20 µA20 µA20 µA20 µA25 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
20 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
1 MHz1 MHz2 MHz3 MHz1 MHz
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP