ТМ4

ТМ4, ТМ4А, ТМ4Б, ТМ4В, ТМ4Г, ТМ4Д, ТМ4Е

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterТМ4АТМ4БТМ4ВТМ4ГТМ4ДТМ4Е
Continuous collector current
IC
<40 mA
Collector surge current
IC-i
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V
Constant power dissipated on the transistor collector
PC
<75 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 7550 ~ 12090 ~ 20020 ~ 7550 ~ 12090 ~ 200
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
6 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
30 µA
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP