М4А

М4, М4А, М4Б, М4В, М4Г, М4Д, М4Е

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Description

Parameters

ParameterМ4АМ4БМ4ВМ4ГМ4ДМ4Е
Continuous collector current
IC
<40 mA
Collector surge current
IC-i
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V
Constant power dissipated on the transistor collector
PC
<75 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 7550 ~ 12090 ~ 20020 ~ 7550 ~ 12090 ~ 200
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
6 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
30 µA
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP