ТМ2

ТМ2, ТМ2А, ТМ2Б, ТМ2В, ТМ2Г, ТМ2Д

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Description

Parameters

ParameterТМ2АТМ2БТМ2ВТМ2ГТМ2Д
Continuous collector current
IC
<50 mA
Collector surge current
IC-i
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V<15 V<10 V<10 V<10 V
Constant power dissipated on the transistor collector
PC
<75 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 6050 ~ 15030 ~ 9070 ~ 21080 ~ 250
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
20 µA20 µA15 µA15 µA15 µA
Reverse collector-emitter current at a given reverse collector-emitter voltage and a given resistance in the base-emitter circuit
ICE-rR
20 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
3 MHz3 MHz9 MHz9 MHz15 MHz
Case temperature
tC
-60 ~ 70
Bipolar transistor structure
Structure
PNP