Доход от майнинга

3ОТ150Б

3ОТ150, 3ОТ150А, 3ОТ150Б

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Description

Parameters

Parameter3ОТ150А3ОТ150Б
Forvard voltage
UF
1.8 V
Forvard current
IF
=20 mA; <20 mA
Forvard pulsed current
IF-i
<50 mA
Insulation resistance
RINS
100 GΩпри U= 500 В
Isolation Surge Voltage
UINS
3 kV
Continuous collector current
IC
<100 mA
Transistor Collector-Emitter Voltage
UCE
<1.5 V
Output current
IOUT
<100 mA
Switch voltage
Usw
<15 V<30 V
Output surge current
IOUT-I
<100 mA