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Parameter | АОТ128А | АОТ128Б | АОТ128В | АОТ128Г | АОТ128Д | |
---|---|---|---|---|---|---|
Forvard voltage | UF | 1.6 V | ||||
Forvard current | IF | =10 mA; <40 mA | ||||
Forvard pulsed current | IF-i | <100 mA | ||||
Insulation resistance | RINS | 100 GΩпри U= 500 В | ||||
Isolation Surge Voltage | UINS | 1.5 kV | ||||
Continuous collector current | IC | <2.5 mA | <10 mA | <5 mA | <5 mA | <10 mA |
Transistor Collector-Emitter Voltage | UCE | <300 mV | <400 mV | <400 mV | <400 mV | <300 mV |
Response time | Tresp | 5 µs | 5 µs | 5 µs | 5 µs | 10 µs |
Output current | IOUT | <8 mA | <32 mA | <16 mA | <16 mA | <32 mA |
Switch voltage | Usw | <50 V | <30 V | <30 V | <15 V | <50 V |
Output surge current | IOUT-I | <8 mA | <32 mA | <16 mA | <16 mA | <100 mA |