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Parameter | АОТ110А | АОТ110Б | АОТ110В | АОТ110Г | АОТ110Д | |
---|---|---|---|---|---|---|
Forvard voltage | UF | 2 V | ||||
Forvard current | IF | =25 mA; <30 mA | ||||
Forvard pulsed current | IF-i | <100 mA | ||||
Insulation resistance | RINS | 1 GΩпри U= 500 В | ||||
Isolation Surge Voltage | UINS | 500 V | ||||
Continuous collector current | IC | <200 mA | <100 mA | <100 mA | <200 mA | <200 mA |
Transistor Collector-Emitter Voltage | UCE | <1.5 V | ||||
Response time | Tresp | 100 µs | ||||
Output current | IOUT | <200 mA | <100 mA | <100 mA | <200 mA | <200 mA |
Switch voltage | Usw | <30 V | <50 V | <30 V | <15 V | <50 V |
Output surge current | IOUT-I | <200 mA | <100 mA | <100 mA | <200 mA | <200 mA |