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Parameter | АОТ102А | АОТ102Б | АОТ102В | АОТ102Г | |
---|---|---|---|---|---|
Forvard voltage | UF | 2 V | |||
Forvard current | IF | =15 mA; <40 mA | |||
Forvard pulsed current | IF-i | <150 mA | |||
Insulation resistance | RINS | 100 MΩпри U= 500 В | |||
Isolation Surge Voltage | UINS | 500 V | |||
Continuous collector current | IC | <50 mA | |||
Transistor Collector-Emitter Voltage | UCE | <4 V | |||
Response time | Tresp | 5 µs | |||
Output current | IOUT | <50 mA | |||
Switch voltage | Usw | <30 V | |||
Output surge current | IOUT-I | <1 A |