Доход от майнинга

2Д809А

2Д809, 2Д809А, 2Д809Б

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Description

Parameters

Parameter2Д809А2Д809Б
Forvard voltage
UF
<1.3 Vпри If = 1 А мА
Reverse voltage
UR
<100 V<80 V
Forvard current
IF
<1 A
Forvard pulsed current
IF-i
<5 A
Reverse current
IR
<1 µA
Reversed pulse voltage
UR-i
<100 V<80 V
Diode capacitance
CD
50 pF
Recovery time
tREC
<2 nsпри Iп/Uо = 500/ мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 500/ мА/В