Доход от майнинга

2ДС807

2ДС807, 2ДС807А

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Description

Parameters

Parameter2ДС807А
Forvard voltage
UF
<950 mVпри If = 5 мА
Reverse voltage
UR
<15 V
Forvard current
IF
<5 mA
Forvard pulsed current
IF-i
<10 mA
Reverse current
IR
<5 µA
Diode capacitance
CD
2.5 pFпри U = 0.1 В
Recovery time
tREC
<4 nsпри Iп/Uо = 10/10 мА/В
Electrical charge, required to switch diode
QRR
<100 pCпри Iп/Uо = 10/10 мА/В