Доход от майнинга

2Д806Б

2Д806, 2Д806А, 2Д806Б

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Description

Parameters

Parameter2Д806А2Д806Б
Forvard voltage
UF
<550 mVпри If = 100 мА
Reverse voltage
UR
<35 V<25 V
Forvard current
IF
<500 mA
Forvard pulsed current
IF-i
<1 A
Reverse current
IR
<250 µA<200 µA
Diode capacitance
CD
20 pF
Recovery time
tREC
<2 nsпри Iп/Uо = 10/10 мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 10/10 мА/В