Доход от майнинга

2Д803

2Д803, 2Д803АС9

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Description

Parameters

Parameter2Д803АС9
Forvard voltage
UF
<1.1 Vпри If = 100 мА
Reverse voltage
UR
<50 V
Forvard current
IF
<200 mA
Forvard pulsed current
IF-i
<1.5 A
Reverse current
IR
<1 µA
Reversed pulse voltage
UR-i
<70 V
Diode capacitance
CD
4 pF
Recovery time
tREC
<400 nsпри Iп/Uо = 50/10 мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 50/10 мА/В