Доход от майнинга

2Д802БС1

2Д802, 2Д802А1, 2Д802БС1

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter2Д802А12Д802БС1
Forvard voltage
UF
<800 mVпри If = 1 мА
Reverse voltage
UR
<5 V
Forvard pulsed current
IF-i
<11.5 mA
Reverse current
IR
<500 nA
Reversed pulse voltage
UR-i
<5 V
Diode capacitance
CD
1.5 pFпри U = 0.1 В
Recovery time
tREC
<5 nsпри Iп/Uо = 5/5 мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 5/5 мА/В