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Parameter | 2Д802А1 | 2Д802БС1 | |
---|---|---|---|
Forvard voltage | UF | <800 mVпри If = 1 мА | |
Reverse voltage | UR | <5 V | |
Forvard pulsed current | IF-i | <11.5 mA | |
Reverse current | IR | <500 nA | |
Reversed pulse voltage | UR-i | <5 V | |
Diode capacitance | CD | 1.5 pFпри U = 0.1 В | |
Recovery time | tREC | <5 nsпри Iп/Uо = 5/5 мА/В | |
Electrical charge, required to switch diode | QRR | при Iп/Uо = 5/5 мА/В |