Доход от майнинга

2Д802А1

2Д802, 2Д802А1, 2Д802БС1

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Description

Parameters

Parameter2Д802А12Д802БС1
Forvard voltage
UF
<800 mVпри If = 1 мА
Reverse voltage
UR
<5 V
Forvard pulsed current
IF-i
<11.5 mA
Reverse current
IR
<500 nA
Reversed pulse voltage
UR-i
<5 V
Diode capacitance
CD
1.5 pFпри U = 0.1 В
Recovery time
tREC
<5 nsпри Iп/Uо = 5/5 мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 5/5 мА/В