Доход от майнинга

КДС525

КДС525, КДС525А, КДС525Б, КДС525В, КДС525Г, КДС525Д, КДС525Е, КДС525Ж, КДС525И, КДС525К, КДС525Л

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Description

Parameters

ParameterКДС525АКДС525БКДС525ВКДС525ГКДС525ДКДС525ЕКДС525ЖКДС525ИКДС525ККДС525Л
Forvard voltage
UF
<900 mVпри If = 2 мА
Reverse voltage
UR
<15 V<15 V<15 V<15 V<15 V<25 V<25 V<25 V<25 V<25 V
Forvard current
IF
<20 mA
Forvard pulsed current
IF-i
<200 mA
Reverse current
IR
<1 µA
Reversed pulse voltage
UR-i
<20 V<20 V<20 V<20 V<20 V<40 V<40 V<40 V<40 V<40 V
Diode capacitance
CD
8 pFпри U = 5 В
Recovery time
tREC
<5 nsпри Iп/Uо = 10/10 мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 10/10 мА/В