Доход от майнинга

ГД511Б

ГД511, ГД511А, ГД511Б, ГД511В

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Description

Parameters

ParameterГД511АГД511БГД511В
Forvard voltage
UF
<600 mVпри If = 5 мА
Reverse voltage
UR
<12 V
Forvard current
IF
<15 mA
Forvard pulsed current
IF-i
<50 mA
Reverse current
IR
<50 µA<100 µA<200 µA
Diode capacitance
CD
1 pFпри U = 5 В
Recovery time
tREC
<100 nsпри Iп/Uо = 10/10 мА/В(not set)<100 nsпри Iп/Uо = 10/10 мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 10/10 мА/В