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КД509А

КД509, КД509А

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Description

Parameters

ParameterКД509А
Forvard voltage
UF
<1.1 Vпри If = 100 мА
Reverse voltage
UR
<50 V
Forvard current
IF
<100 mA
Forvard pulsed current
IF-i
<1.5 A
Reverse current
IR
<5 µA
Reversed pulse voltage
UR-i
<70 V
Diode capacitance
CD
4 pF
Recovery time
tREC
<4 nsпри Iп/Uо = 50/10 мА/В
Electrical charge, required to switch diode
QRR
<400 pCпри Iп/Uо = 50/10 мА/В