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ГД508Б

ГД508, ГД508А, ГД508Б

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Description

Parameters

ParameterГД508АГД508Б
Forvard voltage
UF
<700 mVпри If = 10 мА<650 mVпри If = 10 мА
Reverse voltage
UR
<8 V
Forvard current
IF
<10 mA
Forvard pulsed current
IF-i
<30 mA
Reverse current
IR
<60 µA<100 µA
Reversed pulse voltage
UR-i
<10 V
Diode capacitance
CD
0.75 pFпри U = 0.5 В
Recovery time
tREC
<20 nsпри Iп/Uо = 10/5 мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 10/5 мА/В