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ГД507

ГД507, ГД507А

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Description

Parameters

ParameterГД507А
Forvard voltage
UF
<500 mVпри If = 5 мА
Reverse voltage
UR
<20 V
Forvard current
IF
<16 mA
Forvard pulsed current
IF-i
<100 mA
Reverse current
IR
<50 µA
Reversed pulse voltage
UR-i
<30 V
Diode capacitance
CD
0.8 pFпри U = 5 В
Recovery time
tREC
<100 nsпри Iп/Uо = 20/10 мА/В
Electrical charge, required to switch diode
QRR
при Iп/Uо = 20/10 мА/В