Доход от майнинга

КД503Б

КД503, КД503А, КД503Б, КД503В

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Description

Parameters

ParameterКД503АКД503БКД503В
Forvard voltage
UF
<1 Vпри If = 10 мА<1.2 Vпри If = 10 мА<1.3 Vпри If = 10 мА
Reverse voltage
UR
<30 V<30 V<10 V
Forvard current
IF
<20 mA<20 mA<10 mA
Forvard pulsed current
IF-i
<200 mA
Reverse current
IR
<10 µA<10 µA(not set)
Diode capacitance
CD
5 pF2.5 pF6 pF
Recovery time
tREC
<10 ns<10 ns<50 ns
Electrical charge, required to switch diode
QRR