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Parameter | 2Д502А | 2Д502Б | 2Д502В | 2Д502Г | |
---|---|---|---|---|---|
Forvard voltage | UF | <1 Vпри If = 10 мА | <1 Vпри If = 50 мА | <1 Vпри If = 10 мА | <1 Vпри If = 50 мА |
Reverse voltage | UR | <30 V | <30 V | <100 V | <100 V |
Forvard current | IF | <20 mA | <20 mA | <10 mA | <10 mA |
Forvard pulsed current | IF-i | <300 mA | <300 mA | <200 mA | <200 mA |
Reverse current | IR | <5 µA | |||
Diode capacitance | CD | ||||
Recovery time | tREC | <500 nsпри Iп/Uо = 30/30 мА/В | |||
Electrical charge, required to switch diode | QRR | при Iп/Uо = 30/30 мА/В |