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КП948А

КП948, КП948А, КП948Б, КП948В, КП948Г

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Description

Parameters

ParameterКП948АКП948БКП948ВКП948Г
Noise factor
NF
Power dissipation
P
<20 W
Gate leakage current with connected drain and source
IG
500 µA
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<800 V<800 V<600 V<600 V
Continuous drain current
IDSS
<5 A
Technology of field-effect transistor
Technology
SIT
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<150 mΩ