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КП946Б

КП946, КП946А, КП946Б

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Description

Parameters

ParameterКП946АКП946Б
Noise factor
NF
Power dissipation
P
<40 W
Gate leakage current with connected drain and source
IG
500 µA
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<500 V<300 V
Continuous drain current
IDSS
<15 A
Technology of field-effect transistor
Technology
SIT
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<150 mΩ