КП945
КП945, КП945А, КП945Б
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Description
Parameters
| Parameter | КП945А | КП945Б | |
|---|---|---|---|
Noise factor | NF | ||
Slope of a field effect transistor | S1-S2/I | >2300при Iс = 2 А | |
Gate leakage current with connected drain and source | IG | 10 nAпри Uсз = 20В | |
Input capacitance of field effect transistor | Ciss | 600 pF | |
Feedthrough capacitance | C12 | 150 pF | |
Continuous voltage between gate and drain | UGD | <50 V | <70 V |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <50 V | <70 V |
Continuous drain current | IDSS | <15 A | <10 A |
Power dissipation with heatsink | PHS | <30 W | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <100 mΩ | <150 mΩ |