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КП944А

КП944, КП944А, КП944Б

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Description

Parameters

ParameterКП944АКП944Б
Noise factor
NF
Gate leakage current with connected drain and source
IG
10 nAпри Uсз = 20В
Input capacitance of field effect transistor
Ciss
700 pF
Feedthrough capacitance
C12
80 pF
Continuous voltage between gate and drain
UGD
<50 V<60 V
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<50 V<60 V
Continuous drain current
IDSS
<15 A<10 A
Power dissipation with heatsink
PHS
<30 W
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<300 mΩ<400 mΩ