КП944
КП944, КП944А, КП944Б
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Description
Parameters
| Parameter | КП944А | КП944Б | |
|---|---|---|---|
Noise factor | NF | ||
Gate leakage current with connected drain and source | IG | 10 nAпри Uсз = 20В | |
Input capacitance of field effect transistor | Ciss | 700 pF | |
Feedthrough capacitance | C12 | 80 pF | |
Continuous voltage between gate and drain | UGD | <50 V | <60 V |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <50 V | <60 V |
Continuous drain current | IDSS | <15 A | <10 A |
Power dissipation with heatsink | PHS | <30 W | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | P-ch | |
Channel resistance at ON state | RDS-ON | <300 mΩ | <400 mΩ |