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2П941

2П941, 2П941А, 2П941Б, 2П941В, 2П941Г, 2П941Д

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Description

Parameters

Parameter2П941А2П941Б2П941В2П941Г2П941Д
Noise factor
NF
Power dissipation
P
<3 W<15 W<30 W<30 W<30 W
Slope of a field effect transistor
S1-S2/I
>200при Iс = 0.5 А >600при Iс = 2 А >1200при Iс = 4 А >1000при Iс = 4 А >600при Iс = 2 А
Gate leakage current with connected drain and source
IG
Input capacitance of field effect transistor
Ciss
20 pF100 pF200 pF200 pF200 pF
Continuous voltage between gate and drain
UGD
<41 V
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<36 V
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch