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КП938Б

КП938, КП938А, КП938Б, КП938В, КП938Г, КП938Д

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Description

Parameters

ParameterКП938АКП938БКП938ВКП938ГКП938Д
Noise factor
NF
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and drain
UGD
<500 V<500 V<450 V<400 V<300 V
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<500 V<500 V<450 V<400 V<300 V
Continuous drain current
IDSS
<12 A
Power dissipation with heatsink
PHS
<50 W
Technology of field-effect transistor
Technology
SIT
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<70 mΩ<70 mΩ<100 mΩ<100 mΩ<100 mΩ
Pulse drain current
IDSS-I
<18 A