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КП937

КП937, КП937А

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Description

Parameters

ParameterКП937А
Noise factor
NF
Power dissipation
P
<50 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and drain
UGD
<475 V
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<450 V
Continuous drain current
IDSS
<17 A
Technology of field-effect transistor
Technology
SIT
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<70 mΩ
Pulse drain current
IDSS-I
<30 A